fast switching speed surface mount package ideally suited for automatic insertion general purpose rectification silicon epitaxial planar construction case: minimelf polarity: cathode band marking: cathode band only weight: 0. 12 grams (approx.) characteristic symbol ll4148 LL4448 unit non-repetitive peak reverse voltage v rm 100 v peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 75 v rms reverse voltage v r(rms) 53 v forward continuous current (note 1) i fm 300 500 ma average rectified output current (note 1) i o 150 ma non-repetitive peak forward surge current @ t = 1.0s @ t = 1.0s i fsm 1.0 2.0 a power dissipation (note 1) derate above 25c p d 500 1.68 mw mw/c thermal resistance, junction to ambient air (note 1) r ja 300 k/w operating and storage temperature range t j ,t stg -65 to +175 c maximum ratings notes: 1. valid provided that device terminals are kept at ambient temperature. characteristic symbol min max unit test condition maximum forward voltage ll4148 LL4448 LL4448 v fm 0.62 1.0 0.72 1.0 v i f = 10ma i f = 5.0ma i f = 100ma maximum peak reverse current i rm 5.0 50 30 25 a a a na v r = 75v v r = 70v, t j = 150c v r = 20v, t j = 150c v r = 20v capacitance c j 4.0 pf v r = 0, f = 1.0mhz reverse recovery time t rr 4.0 ns i f = 10ma to i r =1.0ma v r = 6.0v, r l = 100 electrical characteristics l l 4148/LL4448 fast s witching surface mount diode mini melf features mechanical data ? ? ? ? ? ? ? ? maximum ratings and electrical characteristics rating at 25 o c ambient temperature unle ss otherwise specified. dimension in millimeters http://www.luguang.cn mail:lge@luguang.cn
1 10 100 1000 10,000 0 100 200 i , leakage current (na) r t , junction temperature ( c) fig. 2, leakage current vs junction temperatur e j v = 20v r 10 1.0 100 1000 0.1 0.01 01 2 i , instantane o us f o rward current (ma) f v , instantaneous forward voltage (v) fig. 1 forward characteristics f ll4148/LL4448 fast switching surface mount diode http://www.luguang.cn mail:lge@luguang.cn
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